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机构地区:[1]Department of Mathematical Physics Education,Yantai Nanshan University
出 处:《Chinese Physics B》2015年第6期288-295,共8页中国物理B(英文版)
基 金:Project supported by the Natural Science Foundation for Youths of Shandong Province,China(Grant No.ZR2014AQ022)
摘 要:We study the photo-detachment interference patterns of a hydrogen negative ion in the magnetic field near different dielectric surfaces with a semi-classical open orbit theory. We give a clear physical picture describing the photo-detachment of H- in this case. The electron flux distributions are calculated at various dielectric surfaces with unchanged magnetic field strength. It is found that the electron flux distributions of H- are very different in a magnetic field near different dielectric surfaces, namely the dielectric surface has a great influence on the photo-detachment interference pattern of the negative ion. Therefore, the interference pattern in the detached-electron flux distribution can be controlled by changing the dielectric constant. We hope that our studies may guide the future experimental research in photo-detachment microscopy.We study the photo-detachment interference patterns of a hydrogen negative ion in the magnetic field near different dielectric surfaces with a semi-classical open orbit theory. We give a clear physical picture describing the photo-detachment of H- in this case. The electron flux distributions are calculated at various dielectric surfaces with unchanged magnetic field strength. It is found that the electron flux distributions of H- are very different in a magnetic field near different dielectric surfaces, namely the dielectric surface has a great influence on the photo-detachment interference pattern of the negative ion. Therefore, the interference pattern in the detached-electron flux distribution can be controlled by changing the dielectric constant. We hope that our studies may guide the future experimental research in photo-detachment microscopy.
关 键 词:photo-detachment semi-classical open orbit theory interference pattern dielectric surface
分 类 号:O562[理学—原子与分子物理]
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