Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers  

作　　者：谭少阳 翟腾 张瑞康 陆丹 王圩 吉晨 

机构地区：[1]Key Laboratory of Semiconductors Materials,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2015年第6期374-377,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61274046,61335009,61201103,and 61320106013);the National High Technology Research and Development Program of China(Grant No.2013AA014202)

摘　　要：Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt （QW） AIGaAs separate confinement het- erostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt （QW） AIGaAs separate confinement het- erostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.

关 键 词：internal loss free carrier absorption semiconductor laser 

分 类 号：TN248.4[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]