Gate-dependent photoresponse in self-assembled graphene p–n junctions  

作　　者：尹伟红 王玉冰 韩勤 杨晓红 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Science

出　　处：《Chinese Physics B》2015年第6期603-606,共4页中国物理B（英文版）

基　　金：Project supported by the High Technology Research and Development Program of China(Grant No.2013AA031401);the National Natural Science Foundation of China(Grant Nos.61176053,61274069,and 61435002);the National Basic Research Program,China(Grant No.2012CB933503)

摘　　要：The intrinsic photocurrent generation mechanism of a self-assembled graphene p-n junction operating at 1.55 ~tm is investigated experimentally. It is concluded that both a photovoltage effect and a photothermoelectric effect contribute to the final photocurrent. The photocurrent signal at the p-n junction was found to be dominated by photothermoelectric current, arising from different self-assembled doping levels.The intrinsic photocurrent generation mechanism of a self-assembled graphene p-n junction operating at 1.55 ~tm is investigated experimentally. It is concluded that both a photovoltage effect and a photothermoelectric effect contribute to the final photocurrent. The photocurrent signal at the p-n junction was found to be dominated by photothermoelectric current, arising from different self-assembled doping levels.

关 键 词：GRAPHENE PHOTODETECTOR PHOTOVOLTAGE photothermoelectric 

分 类 号：O613.71[理学—无机化学]