Modeling the reactive sputter deposition of Ti-doped VO_x thin films  

作　　者：王涛 于贺 顾德恩 郭睿 董翔 蒋亚东 胡锐麟 

机构地区：[1]School of Optoelectronic Information,University of Electronic Science and Technology of China(UESTC) [2]Center for Plasma Material Interaction,Department of Nuclear,Plasma and Radiological Engineering,University of Illinois at Urbana-Champaign

出　　处：《Chinese Physics B》2015年第6期617-621,共5页中国物理B（英文版）

基　　金：Project partially supported by the National Natural Science Foundation of China(Grant Nos.61405027,61421002,and 61235006);the Postdoctoral Science Foundation of China(Grant No.2014M562296)

摘　　要：In this paper an original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of Ti-doped VOx deposited with changing oxygen flow during reactive sputtering deposition. Ti-doped VOx thin films are deposited using a V target with Ti inserts. The effects of titanium inserts on the discharge voltage, deposition rate, and the ratio of V/Ti are investigated. By doping titanium in the vanadium target, the average sputtering yield decreases. In this case, the sputter erosion reduces, which is accompanied by a reduction in the deposition rate. The ratio between V content and Ti content in the film is measured using energy-dispersive x-ray spectroscopy （EDX）. A decrease in the vanadium concentration with the increasing of the oxygen flow rate is detected using EDX. Results show a reasonable agreement between numerical and experimental data.In this paper an original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of Ti-doped VOx deposited with changing oxygen flow during reactive sputtering deposition. Ti-doped VOx thin films are deposited using a V target with Ti inserts. The effects of titanium inserts on the discharge voltage, deposition rate, and the ratio of V/Ti are investigated. By doping titanium in the vanadium target, the average sputtering yield decreases. In this case, the sputter erosion reduces, which is accompanied by a reduction in the deposition rate. The ratio between V content and Ti content in the film is measured using energy-dispersive x-ray spectroscopy （EDX）. A decrease in the vanadium concentration with the increasing of the oxygen flow rate is detected using EDX. Results show a reasonable agreement between numerical and experimental data.

关 键 词：H-doped VOX EDX 

分 类 号：O484[理学—固体物理]