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机构地区:[1]拉萨师范高等专科学校信息技术系,西藏拉萨850007 [2]西安理工大学自动化与信息工程学院,陕西西安710048
出 处:《激光与光电子学进展》2015年第6期216-221,共6页Laser & Optoelectronics Progress
基 金:国家自然科学基金(61106043)
摘 要:采用X射线光电子能谱(XPS)分析了单层和双层Si Nx膜中的化学键、N/Si比及Si、N、C、O原子百分比,进一步验证了等离子体增强化学气相沉积法沉积单层和双层Si Nx膜对单晶硅太阳电池电学性能的影响。XPS、反射率及少子寿命的分析表明,NH3和Si H4在单晶硅表面生成了含有H的Si Nx薄膜,双层Si Nx外层膜的N/Si比略高于单层膜,起到了更好的减反射效果,内层膜比单层膜富Si,起到了更好的钝化效果。电学测试结果表明,相比单层Si Nx膜单晶硅太阳电池,双层Si Nx膜单晶硅太阳电池开路电压提高了2 m V、短路电流提高了47 m A、转化效率提高了0.17%。Chemical bond in single-layer and double-layer SiNx film, N/Si ratio and atomic percentage of SigN C 、 O are analyzed by X-ray photoelectron spectroscopy (XPS) in this paper. The impact of single-layer and double-layer SiNx film deposited by plasma enhanced chemical vapor deposition (PECVD) on mono-crystalline silicon solar cells electrical characteristic is verified. Analyses of XPS 、 reflectivity and minority carrier lifetime show that the film of SiNx with H atoms is generated on the mono-crystalline surface through NH3 and SiH4. The N/Si ratio of outer film of double-layer SiNx is slightly higher than that of single-layer SiNx, which play the better effect on anti-refiection. And the internal film had a better passivition effect than single-layer film because of richer Si. The electrical characteristic test shows that, comparing with single-layer SiNx film solar cell, open circuit voltage, short circuit current and photoelectric conversion efficiency of double-layer SiNx film solar cell improve by 2 mV, 47 mA and 0.17% respectively.
关 键 词:光电子学 单晶硅太阳电池 双层SiNx膜 X射线光电子能谱 键能 转换效率
分 类 号:TN36[电子电信—物理电子学]
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