Smart-cut方法制备GeOI材料的Ge表面腐蚀研究  

Ge Surface Corrosion in GeOI Preparation by Smart-cut Method

作　　者：邓海量 杨帆[2] 张轩雄[1,2] 

机构地区：[1]上海理工大学光电信息与计算机工程学院,上海200093 [2]中国科学院微电子研究所,北京100029

出　　处：《电子科技》2015年第6期205-207,212,共4页Electronic Science and Technology

摘　　要：通过H离子注入Ge晶圆退火起泡动力学研究,对实现晶圆Ge在氧化硅上层转移后的Ge表面(Ge OI)采用湿法化学腐蚀研究,使其能进一步改善表面质量(即粗糙度),同时去除由于H离子注入Ge所造成的表面非晶层。通过氨水、H2O2、去离子水混合溶液在室温下对被转移Ge层腐蚀,采用原子力显微镜(AFM)和透射电子显微镜(TEM)检测。实验证实,湿法化学腐蚀方法能显著降低表面粗糙度,并去除制备Ge OI过程中所造成的非晶层,从而得到晶格质量完好的表面。The surface blistering kinetics of Ge implanted by H ion based on different implantation conditions is studied for germanium layer transfer to SiO2 to obtain GeOI. The raw Ge surface based on smart-cut technology was etched by chemical solution （mixture of ammonia, H2O2 and deionized water） at room temperature for Ge surface planarizing and removing the amorphous Ge generated by H ion implantation. The characterizations were performed by atomic force microscopy （AFM） and cross-section transmission electron microscopy （X-TEM）. The experimental results demonstrate that the surface roughness of the splitting germanium is improved the amorphous Ge layer originated by H implantation is removed while maintaining perfect germanium pattern lattice.

关 键 词：Smart-cut技术 Ge表面粗糙度 表面腐蚀 

分 类 号：TN304[电子电信—物理电子学]