Enhanced spin diffusion length by suppressing spin-flip scattering in lateral spin valves  

Enhanced spin diffusion length by suppressing spin-flip scattering in lateral spin valves

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作  者:Lin-Jing Pan Le Wang Li-Yuan Zhang 

机构地区:[1]Department of Physics,Renmin University of China [2]Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devices,Renmin University of China

出  处:《Rare Metals》2015年第3期156-159,共4页稀有金属(英文版)

基  金:financially supported by the National Natural Science Foundation of China(Nos.11304381 and 11174366);the Research Funds of Renmin University of China(No.13XNLF02)

摘  要:The spin transport was investigated in permally (Py)/MgO/Ag junction with lateral spin valve structure. Non-local lateral spin valves measurement was carried out to determin, the apin accumulignal in Ag strip, and the spin dif u^sion - length in Ag of the lateral spin valves was extracted from devices with the different distances between injector and detector. The experimental results are found that spin accumulation and spin diffusion length (2s) could be significantly enhanced in Ag strip with MgO capping layer, and those effects may be attributed to the low-surface spin scattering rate in Ag with an MgO cap- ping layer.The spin transport was investigated in permally (Py)/MgO/Ag junction with lateral spin valve structure. Non-local lateral spin valves measurement was carried out to determin, the apin accumulignal in Ag strip, and the spin dif u^sion - length in Ag of the lateral spin valves was extracted from devices with the different distances between injector and detector. The experimental results are found that spin accumulation and spin diffusion length (2s) could be significantly enhanced in Ag strip with MgO capping layer, and those effects may be attributed to the low-surface spin scattering rate in Ag with an MgO cap- ping layer.

关 键 词:Spin accumulation Spin diffusion length Lateral spin valve Spin scattering 

分 类 号:TG111[金属学及工艺—物理冶金]

 

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