Microstructure and electrical properties of Sc_2O_3-doped CaCu_3Ti_4O_(12) ceramics  

作　　者：Dong Xu Ke Zhang Lei Jiao Kai He Hong-Xing Xu Guo-Ping Zhao Ren-Hong Yu 

机构地区：[1]School of Material Science and Engineering,Jiangsu University [2]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China [3]Changzhou Engineering Research Institute of Jiangsu University [4]Changzhou Ming Errui Ceramics Co.,Ltd.

出　　处：《Rare Metals》2015年第3期178-182,共5页稀有金属（英文版）

基　　金：financially supported by the National Nature Science Foundation of China(No.61205128);the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20123227120021);the Natural Science Foundation of Jiangsu Province(No.BK2012156);the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices(No.KFJJ201105);Application Program for Basic Research of Changzhou(No.CJ20125001);the Universities Natural Science Research Project of Jiangsu Province(No.13KJB430006)

摘　　要：CaCu3Ti4O12 ceramics doped with different contents of Sc203 （mol%, x = 0, 0.05, 0.10, 0.15, and 0.20） were prepared by the traditional solid-state reaction method. Scanning electron microscope （SEM） and X-ray diffraction （XRD） were used in the microstructural studies of the specimen, and the electrical properties were inves- tigated. XRD results show that the Sc has no influence on the phase composition. The results from the dielectric measurements show that further increase of Sc doping could decrease the dielectric loss slightly. A high dielectric constant and low dielectric loss can be achieved when the doping concentration is 0.10 mol%.CaCu3Ti4O12 ceramics doped with different contents of Sc203 （mol%, x = 0, 0.05, 0.10, 0.15, and 0.20） were prepared by the traditional solid-state reaction method. Scanning electron microscope （SEM） and X-ray diffraction （XRD） were used in the microstructural studies of the specimen, and the electrical properties were inves- tigated. XRD results show that the Sc has no influence on the phase composition. The results from the dielectric measurements show that further increase of Sc doping could decrease the dielectric loss slightly. A high dielectric constant and low dielectric loss can be achieved when the doping concentration is 0.10 mol%.

关 键 词：CaCu3Ti4012 Rare earth Dielectricproperties VARISTOR Microstructure 

分 类 号：TQ174.1[化学工程—陶瓷工业]