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作 者:张俊敏[1] 王传军[1] 沈月[1] 谭志龙[1] 毕珺[1] 闻明[1] 周砚田
机构地区:[1]昆明贵金属研究所稀贵金属综合利用新技术国家重点实验室,昆明650106 [2]瓦房店轴承股份有限公司,辽宁瓦房店116300
出 处:《贵金属》2015年第2期23-28,共6页Precious Metals
基 金:国家自然科学基金(51262015);云南省对外科技合作计划项目(2014IA037)
摘 要:采用磁控溅射方法,制备了以不同厚度Ru薄膜为籽晶层的CoCrPt-SiO2垂直磁记录薄膜。利用原子力显微镜(AFM)、透射电镜(TEM)分析Ru薄膜的结构和形貌,并研究了其结构对CoCrPt-SiO2薄膜表面形貌、粗糙度及结构的影响。结果表明,CoCrPt-SiO2记录层的晶粒尺寸和粗糙度均随着Ru籽晶层厚度的增加而增加,薄而粗糙的籽晶层适合于高密度磁记录介质。对于CoCrPt-SiO2记录层晶粒的优化,厚度为70nm的Ru籽晶层有利于记录层薄膜晶粒的完全隔离,从而提高了磁记录性能。CoCrPt-SiO2 perpendicular recording films were prepared by the magnetron sputtering with a series of Ru films as the seed layer. The microstructure of Ru seed layers and their effects on the grain size, roughness and surface morphology of CoCrPt-SiO2 granular films were also investigated. It was found that the microstructure of seed layer obviously affected the structure and grain isolation of recording layers. The grain size and roughness of CoCrPt-SiO2 recording layer increased with the increase of the thickness of Ru seed layer. The thin and rough Ru seed layer could be used for the high-density magnetic recording media, but the Ru seed layer with a proper thickness of 70 nm facilitated a perfect isolation, and consequently excellent magnetic properties could be acquired for the final products.
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