β-FeSi_2 films prepared on 6H-SiC substrates by magnetron sputtering  

作　　者：李虹 蒲红斌 郑春蕾 陈治明 

机构地区：[1]Department of Electronic Engineering, Xi'an University of Technology

出　　处：《Journal of Semiconductors》2015年第6期29-34,共6页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.51177134);the Natural Science Basic Research Plan in Shaanxi Province of China(No.2015JM6286)

摘　　要：β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC （0001） substrates using a FeSi2 target and a Si target. X-ray diffraction （XRD） and Raman spectroscopy are applied to analyze the formation of/%FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to%FeSi2 phase as the annealing temperature is increased from 500 to 900 ℃ for 5 min and the optimal annealing temperature is 900 ℃. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope （SEM） observations indicate that the film is βat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope （AFM） measurements demonstrate that the surface roughness confirmed by the root mean square （RMS） of the tJ-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 ℃ for 5 min.β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC （0001） substrates using a FeSi2 target and a Si target. X-ray diffraction （XRD） and Raman spectroscopy are applied to analyze the formation of/%FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to%FeSi2 phase as the annealing temperature is increased from 500 to 900 ℃ for 5 min and the optimal annealing temperature is 900 ℃. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope （SEM） observations indicate that the film is βat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope （AFM） measurements demonstrate that the surface roughness confirmed by the root mean square （RMS） of the tJ-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 ℃ for 5 min.

关 键 词：β-FeSi2 films 6H-SiC substrates magnetron sputtering X-ray diffraction （XRD） 

分 类 号：TN305.92[电子电信—物理电子学]