Heterojunction DDR THz IMPATT diodes based on Al_xGa_(1-x)N/Ga N material system  

作　　者：Suranjana Banerjee Monojit Mitra 

机构地区：[1]Academy of Technology, West Bengal University of Technology [2]Indian Institute of Engineering Science and Technology

出　　处：《Journal of Semiconductors》2015年第6期39-46,共8页半导体学报（英文版）

摘　　要：Simulation studies are made on the large-signal RF performance and avalanche noise properties ofhet- erojunction double-drift region （DDR） impact avalanche transit time （IMPATT） diodes based on AlxGal-xN/GaN material system designed to operate at 1.0 THz frequency. Two different heterojunction DDR structures such as n-Al0.4Ga0.6N/p-GaN and n-GaN/p-Al0.4Ga0.6N are proposed in this study. The large-signal output power, con- version efficiency and noise properties of the heterojunction DDR IMPATTs are compared with homojunction DDR IMPATT devices based on GaN and Al0.4Ga0.6N. The results show that the n-Al0.4Ga0.6N/p-GaN heterojunction DDR device not only surpasses the n-GaN/p-Al0.4Ga0.6N DDR device but also homojunction DDR IMPATTs based on GaN and Al0.4Ga0.6N as regards large-signal conversion efficiency, power output and avalanche noise performance at 1.0 THz.Simulation studies are made on the large-signal RF performance and avalanche noise properties ofhet- erojunction double-drift region （DDR） impact avalanche transit time （IMPATT） diodes based on AlxGal-xN/GaN material system designed to operate at 1.0 THz frequency. Two different heterojunction DDR structures such as n-Al0.4Ga0.6N/p-GaN and n-GaN/p-Al0.4Ga0.6N are proposed in this study. The large-signal output power, con- version efficiency and noise properties of the heterojunction DDR IMPATTs are compared with homojunction DDR IMPATT devices based on GaN and Al0.4Ga0.6N. The results show that the n-Al0.4Ga0.6N/p-GaN heterojunction DDR device not only surpasses the n-GaN/p-Al0.4Ga0.6N DDR device but also homojunction DDR IMPATTs based on GaN and Al0.4Ga0.6N as regards large-signal conversion efficiency, power output and avalanche noise performance at 1.0 THz.

关 键 词：A1GaN/GaN heterojuntion DDR IMPATTs avalanche noise terahertz frequency 

分 类 号：TN312.7[电子电信—物理电子学] TP333.8[自动化与计算机技术—计算机系统结构]