A high linearity X-band SOI CMOS digitally-controlled phase shifter  

作　　者：陈亮 陈新宇 张有涛 李智群 杨磊 

机构地区：[1]Nanjing Electronic Devices Institute Guobo Electronics Co.Ltd [2]RF & OE IC Institute Southeast University [3]Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

出　　处：《Journal of Semiconductors》2015年第6期115-122,共8页半导体学报（英文版）

摘　　要：This paper proposed an X-band 6-bit passive phase shifter （PS） designed in 0.18 μm silicon-on-insulator （SOI） CMOS technology, which solves the key problem of high integration degree, low power, and a small size T/R module. The switched-topology is employed to achieve broadband and fiat phase shift. The ESD circuit and driver are also integrated in the PS. It covers the frequency band from 7.5 to 10.5 GHz with an EMS phase error less than 7.5%. The input and output VSWRs are less than 2 and the insertion loss （IL） is between 8-14 dB across the 7.5 to 10.5 GHz, with a maximum IL difference of 4 dB. The input 1 dB compression point （IP1dB） is 20 dBm.This paper proposed an X-band 6-bit passive phase shifter （PS） designed in 0.18 μm silicon-on-insulator （SOI） CMOS technology, which solves the key problem of high integration degree, low power, and a small size T/R module. The switched-topology is employed to achieve broadband and fiat phase shift. The ESD circuit and driver are also integrated in the PS. It covers the frequency band from 7.5 to 10.5 GHz with an EMS phase error less than 7.5%. The input and output VSWRs are less than 2 and the insertion loss （IL） is between 8-14 dB across the 7.5 to 10.5 GHz, with a maximum IL difference of 4 dB. The input 1 dB compression point （IP1dB） is 20 dBm.

关 键 词：digitally-controlled phase shifter CMOS technology T/R module 

分 类 号：TN623[电子电信—电路与系统]