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机构地区:[1]Electrical Engineering College Henan University of Science and Technology [2]School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices
出 处:《Journal of Semiconductors》2015年第6期156-160,共5页半导体学报(英文版)
基 金:Project supported by the National Basic Research Program of China(No.2010CBxxxx05);the Advance Research Project of China(No.51308xxxx06);the Advance Research Foundation of China(No.9140A08xxxx11DZ111);Doctoral Scientific Research Foundation of Henan University of Science and Technology(No.400613480011);the Foundation of He’nan Educational Commettee(No.15A510001)
摘 要:A fully integrated Ku-band voltage controlled oscillator (VCO) is presented in an InGaP/GaAs hetero- junction bipolar transistor (HBT) technology. To achieve the wide tuning range (TR), the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.A fully integrated Ku-band voltage controlled oscillator (VCO) is presented in an InGaP/GaAs hetero- junction bipolar transistor (HBT) technology. To achieve the wide tuning range (TR), the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of -94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO con- sumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.
关 键 词:voltage controlled oscillator InGaP/GaAs HBT Ku band wide tuning range high output power
分 类 号:TN322.8[电子电信—物理电子学] TN752
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