掺杂的Bi_4Ge_3O_(12)晶体的近红外发光性能  

Near-infrared Luminescence in Doped Bi_4Ge_3O_(12) Crystals

作　　者：俞平胜[1] 苏良碧[2] 徐军[2] 

机构地区：[1]盐城工学院材料工程学院,江苏盐城224051 [2]中国科学院上海硅酸盐研究所透明与光功能无机材料重点实验室,上海201800

出　　处：《发光学报》2015年第3期283-287,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61078053);江苏省自然科学基金(BK20141263)资助项目

摘　　要：生长了Mg、Ca离子掺杂(提拉法)和Cl离子掺杂(坩埚下降法)的Bi4Ge3O12(BGO)晶体,测试了晶体样品的吸收谱、光致发光谱和发光衰减时间等。这些掺杂的BGO晶体的可见光发光比纯BGO有所减弱,但在808 nm和980 nm激光二极管(LD)激发下出现了纯BGO几乎没有的近红外发光,归因于改变了能级的Bi离子或可能出现的低价态Bi离子。掺杂对近红外发光的影响跟掺杂离子价态有关,同价态的掺杂离子对近红外发光的影响相差不大。Mg and Ca doped Bi4Ge3O12 （ BGO） crystals were grown by using Czochralski （ Cz） tech-nique, and Cl doped BGO crystal was prepared by Vertical Bridgman （ VB） method. The absorp-tion, photoluminescence （ PL） and PL lifetime spectra were systematically investigated. The results reveal that the emission intensity of these doped BGO is weaker than that of pure BGO in visible re-gion. Near infrared （ NIR） emission is observed in doped BGO under 808 nm and/or 980 nm laser diodes （ LDs） excitation, and the NIR emission should be ascribed to a changed Bi-related active center or lower valence Bi ions. The valence state of doped ions could be key to achieving the NIR emission in BGO crystals, and the doped ions with same valence could play the similar roles in our experiments.

关 键 词：Bi4Ge3O12 光致发光 近红外 

分 类 号：O482.31[理学—固体物理]