Effect of In Diffusion on the Property of Blue Light-Emitting Diodes  

作　　者：曾勇平 刘文杰 翁国恩 赵婉茹 左海杰 余健 张江勇 应磊莹 张保平 

机构地区：[1]Optoelectronics Engineering Research Center, Department of Electronic Engineering, Xiamen University, Xiamen 361005 [2]Department of Physics, Xiamen University, Xiamen 361005

出　　处：《Chinese Physics Letters》2015年第6期80-83,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 11474235 and 61274052;the Fundamental Research Funds for the Central Universities under Grant No 2013121024;the Key Lab of Nanodevices and Nanoapplications,Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences under Grant No 14ZS02

摘　　要：In diffusion to blue light-emitting diode （LED） wafers is performed by the inductive coupled plasma （ICP） treatment of a covering layer of indium tin oxide （ITO） on the wafer surface. The electrical property of the p- type contact is improved and the redshift of photoluminescence （PL） from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy （XPS） demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20mA, LEDs with ICP-induced In doping show a decrease of 0.3 V in the forward voltage and an increase of 23% in the light output, respectively.In diffusion to blue light-emitting diode （LED） wafers is performed by the inductive coupled plasma （ICP） treatment of a covering layer of indium tin oxide （ITO） on the wafer surface. The electrical property of the p- type contact is improved and the redshift of photoluminescence （PL） from the InGaN quantum well of the wafer is found. Measurements by x-ray photoelectron spectroscopy （XPS） demonstrate that In atoms have diffused into p-GaN. Reflectance spectra of the sample surface reveal the variation caused by the ICP treatment. A model of compensation of the in-plane strain of the InGaN layer is used to explain the redshift of the PL data. Finally, LEDs are fabricated by using as-grown and ICP-treated wafers and their properties are compared. Under an injection current of 20mA, LEDs with ICP-induced In doping show a decrease of 0.3 V in the forward voltage and an increase of 23% in the light output, respectively.

分 类 号：TN312.8[电子电信—物理电子学]