Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays  

作　　者：范茜 陈后鹏 王倩 王月青 吕士龙 刘燕 宋志棠 冯高明 刘波 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [2]Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 [3]University of Chinese Academy of Sciences, Beijing 100049 [4]United Laboratory, Semiconductor Manufacturing International Corporation, Shanghai 201203

出　　处：《Chinese Physics Letters》2015年第6期184-187,共4页中国物理快报（英文版）

基　　金：Supported by the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No XDA09020402;the National Key Basic Research Program of China under Grant Nos 2013CBA01900,2010CB934300,2011CBA00607,and 2011CB932804;the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003;the National Natural Science Foundation of China under Grant Nos 61176122,61106001,61261160500,and 61376006;the Science and Technology Council of Shanghai under Grant Nos 12nm0503701,13DZ2295700,12QA1403900,and 13ZR1447200

摘　　要：A novel slow-down set waveform is proposed to improve the set performance and a 1 kb phase change random access memory chip fabricated with a 13nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse. The amplitude difference （I1 - I2） of the set pulse is proved to be a crucial parameter for set programming. We observe and analyze the cell characteristics with different I1 - I2 by means of thermal simulations and high-resolution transmission electron microscopy, which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1 - I2. This will lead to an amorphous residue in the active region. We also discuss the programming method to avoid the set performance degradations.A novel slow-down set waveform is proposed to improve the set performance and a 1 kb phase change random access memory chip fabricated with a 13nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse. The amplitude difference （I1 - I2） of the set pulse is proved to be a crucial parameter for set programming. We observe and analyze the cell characteristics with different I1 - I2 by means of thermal simulations and high-resolution transmission electron microscopy, which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1 - I2. This will lead to an amorphous residue in the active region. We also discuss the programming method to avoid the set performance degradations.

关 键 词：PCRAM Set Programming Method and Performance Improvement of Phase Change Random Access Memory Arrays 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]