Uniform single-layer graphene growth on recyclable tungsten foils  

作　　者：Zhiyu Zou Xiuju Song Ke Chen Qingqing Ji Yanfeng Zhang Zhongfan Liu 

机构地区：[1]Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry for Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China [2]Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, China [3]Department of Materials Science and Engineering, College of Engineering, Peking University, Bei]ing 100871, China

出　　处：《Nano Research》2015年第2期592-599,共8页纳米研究（英文版）

摘　　要：To meet the rising demand of graphene in electronics and optoelectronics, developing an efficient synthesis strategy for effective control of the layer thickness is highly necessary. Herein, we report the synthesis of strictly single- layer graphene on the foil of an early transition metal, tungsten （W）, via a simple chemical vapor deposition route. The cracking of hydrocarbons is facilitated by the catalytically active metal surface of W, while the subsequent two-dimensional growth is mediated by the carbide-forming ability within the underlying bulk, leading to the formation of uniform monolayer graphene. The as-grown graphene layers can be transferred onto target substrates rapidly through the recently developed electrochemical method, which also allows for reuse of the substrates at least five times without introducing quality deteriora- tion. Moreover, considering the refractory nature of W foils, a complementary component of nickel is added, by means of which the growth temperature of graphene can be significantly reduced. In brief, a highly-efficient and low-cost synthesis route has been developed for the growth of graphene towards large-area uniformity, single-layer thickness and high crystalline quality.为了遇见升起，在电子学和光电子 graphene 要求为层厚度的有效控制的有效合成策略是高度必要的，发展。此处，我们在早转变金属的陪衬上报导严格地单个层的 graphene 的合成，钨(W) ，经由一条简单化学蒸汽免职线路。当随后的二维的生长被形成碳化物的能力在内在的体积以内调停时，裂开烃被 W 的催化地活跃的金属表面便于，导致一致单层 graphene 的形成。成长得当的 graphene 层能通过最近发达的电气化学的方法很快被转移到目标底层上，它也允许底层的复用没有介绍优秀恶化的至少五次。而且就 W 陪衬的倔强的性质而言，镍的一个互补部件被增加，借助于哪个 graphene 的生长温度能显著地被减少。简言之，一条高度有效、便宜的合成线路向大区域的一致性，单个层的厚度和高水晶的质量为 graphene 的生长被开发了。

关 键 词：GRAPHENE chemical vapor deposition single layer TUNGSTEN CARBIDE recyclable substrate 

分 类 号：TG743[金属学及工艺—刀具与模具] TN304.054[电子电信—物理电子学]