Materialization of strained CVD-graphene using thermal mismatch  

Materialization of strained CVD-graphene using thermal mismatch

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作  者:Seung-Mo Lee Sang-Min Kim Min Young Na Hye Jung Chang Kwang-Seop Kim Hyunung Yu Hak-Joo Lee Jae-Hyun Kim 

机构地区:[1]Nano-Convergence Mechanical Systems Research Division, Korea Institute of Machinery & Materials (KIMM), 156 Gajungbuk-ro, Yuseong-gu, Daejeon 305-343, Republic of Korea [2]Nano Mechatronics, University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 305-333, Republic of Korea [3]Graduate School of Energy Environment Water and Sustainability, Korea Advanced Institute of Science & Technology (KAIST), Daejeon 305-701, Republic of Korea [4]Department of Materials Science and Engineering, Yonsei University, SO Yonsei-ro, Seodaemun-gu, Seou1120-749, Republic of Korea [5]Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul 130-791, Republic of Korea [6]Korea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Yuseong-gu, Daejeon 305-343, Republic of Korea

出  处:《Nano Research》2015年第6期2082-2091,共10页纳米研究(英文版)

摘  要:Theoretical physics foretells that "strain engineering" of graphene could hold the key to finding treasures still hidden in two-dimensional (2D) condensed matter physics and commercializing graphene-based devices. However, to produce strained graphene in large quantities is not an easy task by any means. Here, we demonstrate that thermal annealing of graphene placed on various substrates could be a surprisingly simple method for preparing strained graphene with a large area. We found that enhanced graphene-substrate interfacial adhesion plays a critical role in developing strained graphene. Creative device architectures that consider the thermal mismatch between graphene and the target substrate could enable the resulting strain to be intentionally tailored. We believe that our proposed method could suggest a shortcut to realization of graphene straintronics.理论物理预知 graphene 的紧张工程能支配发现财富仍然隐藏在二维(2D ) 压缩了事物理和商品化的基于 graphene 的设备。然而,在大数量拉紧 graphene 生产不是由任何工具的一项容易的任务。这里,我们证明放在各种各样的底层上的 graphene 的热退火能是为与一个大区域准备拉紧的 graphene 的一个令人惊讶地简单的方法。我们在开发拉紧的 graphene 发现界面的粘附玩的那提高的 graphene 底层一个关键角色。考虑在 graphene 和目标底层之间的热失配的有创造性的设备体系结构能使产生紧张能有意被定制。我们相信我们的建议方法能建议一条捷径到 graphene straintronics 的实现。

关 键 词:GRAPHENE strain engineering thermal mismatch strained graphene 

分 类 号:TQ174.758[化学工程—陶瓷工业] TQ127.11[化学工程—硅酸盐工业]

 

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