Interfacial state induced ultrasensitive ultraviolet light photodetector with resolved flux down to 85 photons per second  

作　　者：Yong-Qiang Yu Lin-Bao Luo Ming-Zheng Wang Bo Wang Long-Hui Zeng Chun-Yan Wu Jian-Sheng Jie Jian-Wei Liu Li Wang Shu-Hong Yu 

机构地区：[1]School of Electronic Science and Applied Physics, Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, China [2]Institute of Functional Nano & Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China [3]Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, University of Science and Technology of China, Hefei 230026, China

出　　处：《Nano Research》2015年第4期1098-1107,共10页纳米研究（英文版）

摘　　要：We present an ultrasensitive ultraviolet （UV） detector based on a p-type ZnS nanoribbon （NR）/indium tin oxide （ITO） Schottky barrier diode （SBD）. The device exhibits a pseudo-photovoltaic behavior which can allow the SBD to detect UV light irradiation with incident power of 6 × 10^-17 W （-85 photons/s on the NR） at room temperature, with excellent reproducibility and stability. The corresponding detectivity and photoconductive gain are calculated to be 3.1 × 10^20 cm.Hz1/2.W^-1 and 6.6 × 10^5, respectively. It is found that the presence of the trapping states at the p-ZnS NWITO interface plays a crucial role in determining the ultrahigh sensitivity of this nanoSBDs. Based on our theoretical calculation, even ultra-low photon fluxes on the order of several tens of photons could induce a significant change in interface potential and consequently cause a large photocurrent variation. The present study provides new opportunities for developiphigh-performance optoelectronic devices in the future.我们在场 ultrasensitive 紫外紫外察觉者基于 p 类型 ZnS nanoribbon NR/indium 听氧化物 ITO Schottky 障碍二极管 SBD。设备展出能允许 SBD 与 6 湡 ? 慨 ? 湡愠灰牡湥 ? 捡楴慶楴湯攠敮杲 ? 獡氠睯愠 ? 的事件力量检测紫外轻照耀的伪 photovoltaic 行为 ?? ″ ? 鐿?? 鐿?? 颒酃 ? 鮬???? 辬???? 殰吗？？

关 键 词：II-VI group DETECTIVITY Schottky barrier diode optoelectronic device interfacial states 

分 类 号：TN23[电子电信—物理电子学] TB332[一般工业技术—材料科学与工程]