Highly uniform carbon nanotube nanomesh network transistors  

作　　者：Sung-Jin Choi Patrick Bennett Dongil Lee Jeffrey Bokor 

机构地区：[1]School of Electrical Engineering, Kookmin University, Seoul 136-702, Republic of Korea [2]Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA [3]Applied Science & Technology, University of California, Berkeley, CA 94720, USA [4]Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea [5]Materials Sciences Division, Lawrence Berkeley National Laboratories, CA 94720, USA

出　　处：《Nano Research》2015年第4期1320-1326,共7页纳米研究（英文版）

摘　　要：A new type of single-walled carbon nanotube （SWNT） thin-film transistor （TFT） structure with a nanomesh network channel has been fabricated from a pre- separated semiconducting nanotube solution and simultaneously achieved both high uniformity and a high on/off ratio for application in large-scale integrated circuits. The nanomesh structure is prepared on a high-density SWNT network channel and enables a high on/off ratio while maintaining the excellent uniformity of the electrical properties of the SWNT TFTs. These effects are attributed to the effective elimination of metallic paths across the source/drain electrodes by forming the nanomesh structure in the high-density SWNT network channel. Therefore, our approach can serve as a critical foundation for future nanotube-based thin- film display electronics.有一条 nanomesh 网络隧道的围单人赛的碳 nanotube SWNT 薄电影的晶体管 TFT 结构的一种新类型从 preseparated 被制作了半导体的 nanotube 答案并且同时在大规模集成电路为申请完成了高一致性和高开／关比率。nanomesh 结构在一条高密度的 SWNT 网络隧道上被准备并且当维持 SWNT TFT 的电的性质的优秀一致性时，启用高开／关比率。这些效果被在高密度的 SWNT 网络隧道形成 nanomesh 结构越过来源 / 排水管电极归因于金属性的路径的有效消除。因此，我们的途径能为未来用作一个批评基础基于 nanotube 的 thinfilm 显示电子学。

关 键 词：carbon nanotube network thin-film transistor NANOMESH solution process highly uniform 

分 类 号：TN321.5[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]