Excellent photothermal conversion of core/shell CdSe/ Bi2Se3 quantum dots  

作　　者：Guo Zhi Jia Wen Kai Lou Fang Cheng Xiong Long Wang Jiang Hong Yao Ning Dai Hai Qing Lin Kai Chang 

机构地区：[1]Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China [2]Tianjin Chengjian University, Tianjin 300384, China [3]Department of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410004, China [4]Key Laboratory of Weak-Light Nonlinear Photonics, Ministry of Education, School of Physics and TEDA Appfied Physics School, Nankai University, Tianjin 300457, China [5]The National Laboratory for Infrared Physics, the Shanghai Institute of Technical Physics of the Chinese Academy of Sciences, Shanghai 200083, China [6]Beijing ComputationalScience Research Center, Beijing, 100084, China

出　　处：《Nano Research》2015年第5期1443-1453,共11页纳米研究（英文版）

基　　金：This work has been partly supported by the National Basic Research Program of China （973 Program） No. 2011CB922204-2, and the National Natural Science Foundation of China （Nos. 11434010, 11147024, 11247025, 11304306, 11374002, and 61290303）.

摘　　要：Water-dispersed CdSe/Bi2Se3 core/shell QDs with a photothermal conversion coefficient of 27.09% have been synthesized by a cation exchange reaction. The microstructure and crystal structure of the QDs, which were confirmed by TEM and XRD, showed that partial cation exchange occurred inside the CdSe QDs. Two main mechanisms are responsible for the excellent photothermal conversion： inhibition of radiative recombination of carriers due to the formation of type-II semiconductor heterostructures, and the large surface-to-volume ratio of the QDs. Photothermal conversion experiments indicated that the CdSe/Bi2Se3 QDs showed high photothermal conversion efficiency and excellent NIR photostability.分散水的 CdSe/Bi < 潜水艇 class= “ a-plus-plus ” > 2 </sub > Se < 潜水艇 class= “ a-plus-plus ” > 有 27.09% 的一个 photothermal 变换系数的 3 </sub> 核心 / 壳 QD 被阳离子交换反应综合了。QD 的微观结构和水晶结构，被 TEM 和 XRD 证实，证明部分阳离子交换发生在 CdSe QD 内。二主要机制为优秀 photothermal 变换负责：搬运人的放射的再结合的抑制由于 type-II 半导体 heterostructures，和 QD 的大 surface-to-volume 比率的形成。Photothermal 变换实验显示 CdSe/Bi < 潜水艇 class= “ a-plus-plus ” > 2 </sub > Se < 潜水艇 class= “ a-plus-plus ” > 3 </sub> QD 显示出高 photothermal 变换效率和优秀 NIR photostability。

关 键 词：cation exchange quantum dots PHOTOTHERMAL type-II heterostructure CdSe/Bi2Se3 

分 类 号：TN304.25[电子电信—物理电子学] TK51[动力工程及工程热物理—热能工程]