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作 者:Eun Hei Cho Won Geun Song Cheol Joon Park Jeongyong Kim Sunkook Kim Jinsoo Joo
机构地区:[1]Department of Physics, Korea University, Seou1136-713, R. O. Korea [2]Department of Electronics and Radio Engineering Institute for Laser Engineering, Kyung Hee University, Yongin, Gyeonggi-do 446-70 I, R. O. Korea [3]Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS) Department of Energy Science, Sungkyunkwan University, Suwon 440-746, R. O. Korea
出 处:《Nano Research》2015年第3期790-800,共11页纳米研究(英文版)
摘 要:Multilayer MoS2 is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a new type of phototransistor using multilayer MoS2 crystal hybridized with p-type organic semiconducting rubrene patches. Owing to the outstanding photophysical properties of rubrene, the device characteristics such as charge mobility and photoresponsivity were considerably enhanced to an extent depending on the thickness of the rubrene patches. The enhanced photoresponsive conductance was analyzed in terms of the charge results of the nanoscale laser confocal time-resolved PL measurements. transfer doping effect, validated by the microscope photoluminescence (PL) and多层的瞬间 < 潜水艇 class= “ a-plus-plus ” > 2 </sub> 是为察觉到,收获的精力,和由于它的吸引人的悦耳的电子乐队结构的 optoelectronic 设备的有希望的活跃材料。然而,它的 optoelectronic 应用由于它的间接乐队差距性质被限制了。在这研究,我们用多层的瞬间制作了光电晶体管的一种新类型 < 潜水艇 class= “ a-plus-plus ” > 有 p 类型的 2 </sub> 水晶 hybridized 器官的半导体的 rubrene 补丁。由于 rubrene 的突出的 photophysical 性质,象费用活动性和 photoresponsivity 那样的设备特征更加被提高到取决于 rubrene 补丁的厚度的程度。提高的 photoresponsive 传导力以做效果的费用转移被分析,由 nanoscale 激光的结果验证了共焦的显微镜光致发光(PL ) 和解决时间的 PL 大小。
关 键 词:MOS2 RUBRENE transistor photoresponsivity charge transfer
分 类 号:TN364.3[电子电信—物理电子学] TQ136.12[化学工程—无机化工]
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