基于BZO衬底的高效非晶硅及非晶/微晶硅叠层太阳电池  

A-Si:H AND a-Si:H/μc-Si:H TANDEM SOLAR CELL

作　　者：方家[1,2] 陈泽[1] 白立沙[1,2] 陈新亮[1] 魏长春[1] 王广才[1] 赵颖[1,2] 张晓丹[1,2] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,天津300071 [2]天津化学化工协同创新中心,天津300072

出　　处：《太阳能学报》2015年第6期1511-1516,共6页Acta Energiae Solaris Sinica

基　　金：国家高技术研究发展(863)计划(2013AA050302)

摘　　要：通过研究氢稀释对硼掺杂的硅氧材料特性的影响,制备出具有高纵向电导率(1.1×10^(-5)S/cm)、低横向电导率4.2×10^(-5)S/cm和宽带隙(2.52 eV)的p型纳米硅氧(p-nc-SiO_x:H)材料,将其作为非晶硅电池(a-Si:H)的窗口层,使短波响应得到明显提升。但由于宽带隙p-nc-SiO_x:H层的引入,使p/i界面能带失配,恶化了电池性能。因此研究p/i界面缓冲层带隙对电池性能的影响,发现提高缓冲层带隙,使电池的内建电场得到明显提升,从而提高电池的转换效率。将获得的具有高开路电压的a-Si:H电池作为顶电池应用到非晶/微晶硅叠层电池中,得到效率达12.99%的高效非晶/微晶硅叠层太阳电池。The conductivity of 2.52 eV, which p-nc-SiOx： H film was prepared by high hydrogen dilution with a combination of high lengthwise 1.1×10-5 S/cm and low transverse conductivity of 4.2×10-8 S/cm as well as high optical bandgap of was as the window layer of single-junction a-Si： H solar cell and demonstrated the higher quantum efficiency at the short wavelength. However, the recombination at p/i interface was enhanced due to the larger band gap of p-nc-SiOx ： H window layer. The effect of band gap of buffer layers at p/i interface on the performance of a-Si ： H solar cell was studied. The results indicate that increasing the band gap of buffer layer can significantly improve the built-in electric field and the conversion efficiency. The initial conversion efficiency of optimized a-Si ： H/μc-Si ： H tandem solar cell can reach up to 12.99% based on a-Si：H cell having high open circuit voltage as top cell.

关 键 词：非晶硅电池 非晶硅氧材料 p/i缓冲层 非晶/微晶硅叠层电池 

分 类 号：TM615[电气工程—电力系统及自动化]