太阳电池PID现象的数值模拟分析  

NUMERICAL SIMULATION OF POTENTIAL INDUCED DEGRADATION IN SILICON SOLAR CELL

作　　者：向昱任[1] 周春兰[1] 王文静[1] 

机构地区：[1]中国科学院太阳能热利用及光伏系统重点实验室中国科学院电工研究所,北京100190

出　　处：《太阳能学报》2015年第6期1517-1521,共5页Acta Energiae Solaris Sinica

基　　金：国家高技术研究发展(863)计划(2015AA050302)

摘　　要：针对传统晶硅太阳电池电势诱导衰减(PID)现象中可动电荷Na^+在硅表面积累的影响,对发生PID现象电池的非漏电区域和漏电区域分别采用扩展的肖克莱-里德-霍尔复合模型和双电荷层导致p-n结导通的假说进行分析讨论。根据分析结果推测,可动电荷Na^+对于组件效率的影响同被SiN_x的场钝化作用所屏蔽的隐性缺陷密切相关。提高界面钝化效果,阻止Na^+扩散至界面处同隐性缺陷结合有利于抗PID组件的制备。The effect of Na＋ accumulation on potential-induced degradation （PID） in no-shunting region was investigated with the Extended-Shockley-Read-Hall interface recombination formalism （ESRH）and the effect in shunting region with the charge double layer inducing p-n junction shunt model. The results show that the effect of Na＋ on conversion efficiency of PV module is related to recessive defects which are shielded by the field effect passivation of SiNx. Improving the interfacial passivation and preventing Na＋ combining with the interfacial recessive defects are helpful in PID-free modules fabrication.

关 键 词：电势诱导衰减 表面复合 表面电荷 太阳电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]