Compact silicon-on-insulator-based 2 × 2 Mach–Zehnder interferometer electro-optic switch with low crosstalk  

作　　者：邢界江 李智勇 周培基 巩源浩 俞育德 谭满清 余金中 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Optics Letters》2015年第6期40-43,共4页中国光学快报（英文版）

基　　金：supported by the National Basic Research Program of China(Grant No.2011CB301701);the National High Technology Research and Development Program of China(Grant Nos.2013AA014402,2015AA016904,and 2012AA012202);the National Natural Science Foundation of China(Grant Nos.61107048 and 61275065)

摘　　要：We report a compact 2×2 Mach-Zehnder interferometer （MZI） electro-optic switch fabricated on a silicon- on-insulator using standard complementary metal-oxide semiconductor （CMOS） processes. With a short modu- lation arm length of 200μm, the crosstalk is reduced to -22 dB by the new modulation scheme of push-pull modulation with a pre-biased π2 phase shift. The new modulation scheme can also work with a fast switching time of about 5.4 ns.We report a compact 2×2 Mach-Zehnder interferometer （MZI） electro-optic switch fabricated on a silicon- on-insulator using standard complementary metal-oxide semiconductor （CMOS） processes. With a short modu- lation arm length of 200μm, the crosstalk is reduced to -22 dB by the new modulation scheme of push-pull modulation with a pre-biased π2 phase shift. The new modulation scheme can also work with a fast switching time of about 5.4 ns.

关 键 词：Compact silicon-on-insulator-based 2 MACH Zehnder interferometer electro-optic switch with low crosstalk MZI 

分 类 号：TH744.3[机械工程—光学工程]