CAS玻璃釉对TaN薄膜电阻器功率影响研究  

Influence of Power on TaN Thin Film Resistors by CAS Glass Glaze

作　　者：黄子宽 张怀武[1] 唐晓莉[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2015年第3期460-463,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(50972023)

摘　　要：采用反应直流磁控溅射法在镍锌铁氧体基片上制备的TaN薄膜电阻器,由于镍锌铁氧体基片表面平整性差,散热性能低,制得的电阻器功率为1 W。通过制作CaO-Al2O3-SiO2(CAS)玻璃釉,以丝网印刷的方式对基片表面进行处理,再经过850℃烧结处理,得到具有一定表面平整性的基片。基于处理后的铁氧体基片制作的TaN薄膜功率电阻器的功率显著提高,从1 W提升到了2.5 W。TaN thin film resistors were prepared on Ni-Zn ferrite substrate by the reactive DC magnetron sputte- ring method. Since the Ni-Zn ferrite suhstrate had poor surface flatness and low heat dissipation, the power of the resistor was just 1 W. CaO-Al2 O3-SiO2 （CAS） glass glaze was made to treat the surface of the substrate by the man ner of screen printing,and then the substrate were sintered at 850 ℃, thus the substrate with a smooth surface was made. Finally, the power of resistors made on the treated substrates was greatly increased from 1 W to 2.5 W.

关 键 词：镍锌铁氧体基片 TaN薄膜电阻器 CAS玻璃釉 功率 

分 类 号：TN384[电子电信—物理电子学] TM54[电气工程—电器]