基于SOI薄膜的硅压敏电阻变化率计算方法  

A Method of Calculating the Changing Rate of the Silicon Piezoresistance Based on SOI Films

作　　者：李丹丹[1,2] 梁庭[1,2] 李赛男[1,2] 姚宗[1,2] 洪应平[1,2] 齐蕾[1,2] 杨帆[1,2] 熊继军[1,2] 

机构地区：[1]中北大学电子测试技术重点实验室,太原030051 [2]中北大学仪器科学与动态测试教育部重点实验室,太原030051

出　　处：《微纳电子技术》2015年第6期384-389,共6页Micronanoelectronic Technology

基　　金：国家杰出青年科学基金资助项目(51425505)

摘　　要：用小挠度方形膜作为理论模型,提出了一种基于绝缘体上硅(SOI)敏感薄膜的硅压敏电阻变化率新型积分计算方法。针对传统中心点计算方法的不足,通过整个平面积分的方法计算电阻变化率,并计算出输出电压和外部气压的关系表达式,与传统中心点计算方法进行比较;同时,利用仿真的方法算出灵敏度,并将计算的理论值与实验值进行比较。实验结果表明,外界温度不变,当输入电压为5 V、单个压敏电阻值为4.5 kΩ时,敏感芯片的灵敏度为6.028 3×10-4 mV/Pa。该灵敏度值相比传统中心点法和仿真计算方法,与采用新型积分计算方法的计算值更接近。With the small deflection square film as the theoretical model, a novel integral calculation method based on the micro structure surface of silicon on insulator （SOD sensitive films was proposed to calculate the changing rate of the silicon piezoresistance. Aiming at the shortage of the traditional center point calculation method, the changing rate of piezoresistance was calculated by the method of the whole plane integral, and the relationship expression of the output voltage and the external air pressure was calculated, then compared with the traditional center point calculation method. Meanwhile, the sensitivity was calculated by the simulation method, and then the theoretical values were compared with the experimental values. The experiment result shows that when the input voltage is 5 V and a single piezoresistor value is 4.5 kΩ with the constant outside temperature, the sensitivity of the sensitive chip is 6.028 3×10^-4 mV/Pa. Compared with the traditional central point method and simulation calculation method, the sensitivity value is closer to the value by using the new integral calculation method.

关 键 词：压敏电阻 压力传感器 平面积分 敏感薄膜 灵敏度 

分 类 号：TN302[电子电信—物理电子学]