提高银基半导体材料光催化性能的有效途径  

The Effective Method of Photocatalytic Activity Enhancing for Ag--based Semiconductors

作　　者：王存[1] 邹晓川[1] 石永芳[2] 王燕[3] 王跃[1] 

机构地区：[1]重庆第二师范学院生物与化学工程系,重庆400067 [2]中科院福建物质结构研究所,福建福州350002 [3]重庆市巴蜀中学,重庆400013

出　　处：《中国材料科技与设备》2015年第3期4-7,共4页Chinese Materials Science Technology & Equipment

基　　金：重庆市科委前沿与应用基础研究项目（cstc2013jcyjA50033）、重庆市教委科学技术研究项目（KJl31512）、重庆第二师范学院校级教改项目（JG2014213）

摘　　要：银基材料因其合适的能隙而具有较好的光催化性能。然受其自身结构的限制（量子效率普遍不高）及见光容易分解的化学不稳定性等原因，单纯的块体银基半导体还不够理想，需要对其进一步改进和优化。本文简要论述了几种能较好提高该类材料光催化性能的方法，包括利用贵金属的等离子效应，材料的晶体工程和量子尺寸效应等几种途径。The Ag--based semiconductors have good photocatalytic activity due to their suitable bandgap. However, the pure bulk Ag--based semiconductors are not ideal enough because of their crystal structure, which leads to poor quantum effi- ciency, and chemical instability when they expose to sunlight; hence, it is necessary to improve and optimize those materials. This paper discusses some effective methods of photocatalytic activity enhancing for Ag--based semiconductors, such as mak- ing use of the plasma effect of precious metals, the crystal engineering of materials, and quantum size effect, et. al.

关 键 词：银基半导体 光催化性能 提高的途径 

分 类 号：TB332[一般工业技术—材料科学与工程]