检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
机构地区:[1]福州大学物理与信息工程学院,福州350002
出 处:《微电子学》2015年第3期311-314,319,共5页Microelectronics
基 金:福建省科技厅重大专项资助项目(2011H6015);2013年福建省战略性新兴产业发展专项产业技术开发项目
摘 要:为了防止功率管的功耗过大导致芯片受损,采用SMIC 0.18μm CMOS工艺,设计了一种具有过温与过流保护功能的低压差线性稳压器。仿真结果表明,LDO电路具有良好的线性调整率和负载调整率,过温、过流保护电路能够实现对电路的保护。在过热、过流或负载短路的情况下,降低系统的功耗,且当故障排除后,可自动恢复工作。在2-3.6V的输入电压范围内,电路的稳定输出电压为1.8V,电源调整率不超过0.194‰,负载调整率不超过1.1‰。In order to prevent excessive power dissipation of the power tube leading to damage the chip, a LDO regulator with thermal and over-current protection was designed, and the circuit was designed based on SMIC 0.18 -m CMOS process. Simulation results showed that it had good linear adjustment capacity and good load adjustment capacity. Over-temperature protection circuit and over-current protection circuit could be achieved on the circuit protection. In the case of over-temperature, over-current or short circuit, the power consumption of the system was low. After troubleshooting, the system could automatically return to normal work. When the input voltage changed from 3 V to 5 V, the system could stabilize the output voltage at 1.8 V. Typical line and load regulations of the LDO were less than 0. 194‰ and 1.1‰.
分 类 号:TN431[电子电信—微电子学与固体电子学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.112