出 处:《Chinese Journal of Polymer Science》2015年第8期1162-1175,共14页高分子科学(英文版)
基 金:financially supported by the National Natural Science Foundation of China(Nos.51273173 and 51003093);the Research Foundation of Education Bureau of Zhejiang Province(No.Y200908238)
摘 要:The effect of chemically reduced graphene oxide (CRGO) on the phase separation behavior of poly(methyl methacrylate)/poly(styrene-co-acrylonitrile) (PMMA/SAN) blends and the simultaneous response of rheological and conductive behavior of PMMA/SAN/CRGO nanocomposites upon annealing above the phase-separation temperatures were investigated. The introduction of CRGO causes the decrease of binodal temperature and the increase of spinodal temperature for PMMA/SAN blends and then enlarges their metastable regime. During annealing, the well-dispersed CRGO in the homogeneous blend matrix tends to be selectively located in the SAN-rich phase with the evolution of phase separation and then the CRGO further agglomerates effectively in the SAN-rich phase to form the conductive pathway. Thermal-induced dynamic percolation is observed for both the resistivity p and dynamic storage modulus G' as a function of annealing time. The resistivity variation is ascribed to the agglomeration of CRGO in the SAN-rich phase, while the modulus evolution is attributed to the combined contribution of phase separation for blend matrix and the agglomeration of CRGO in the SAN-rich phase.The effect of chemically reduced graphene oxide (CRGO) on the phase separation behavior of poly(methyl methacrylate)/poly(styrene-co-acrylonitrile) (PMMA/SAN) blends and the simultaneous response of rheological and conductive behavior of PMMA/SAN/CRGO nanocomposites upon annealing above the phase-separation temperatures were investigated. The introduction of CRGO causes the decrease of binodal temperature and the increase of spinodal temperature for PMMA/SAN blends and then enlarges their metastable regime. During annealing, the well-dispersed CRGO in the homogeneous blend matrix tends to be selectively located in the SAN-rich phase with the evolution of phase separation and then the CRGO further agglomerates effectively in the SAN-rich phase to form the conductive pathway. Thermal-induced dynamic percolation is observed for both the resistivity p and dynamic storage modulus G' as a function of annealing time. The resistivity variation is ascribed to the agglomeration of CRGO in the SAN-rich phase, while the modulus evolution is attributed to the combined contribution of phase separation for blend matrix and the agglomeration of CRGO in the SAN-rich phase.
关 键 词:Phase separation Chemically reduced graphene oxide PMMA/SAN blend Electrical conduction Dynamicmodulus.
分 类 号:TQ317[化学工程—高聚物工业] O613.71[理学—无机化学]
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