闪存数据库缓冲区置换算法综述  

Buffer replacement algorithm for Flash-based database

作　　者：郑开[1] 

机构地区：[1]西南大学应用技术学院,重庆401147

出　　处：《微型机与应用》2015年第6期7-9,12,共4页Microcomputer & Its Applications

摘　　要：随着闪存技术的发展和闪存容量的不断增大,闪存存储被广泛应用,给闪存数据库管理带来机遇和挑战。因为闪存和磁盘读写方式不同,读写性能也有差别,所以对于闪存缓冲区的管理成为一个亟待解决的问题。为了提高闪存的访问性能,缓冲区置换算法在保证命中率的同时要尽量减少写和擦除操作的次数。对主流的闪存数据库缓冲区置换算法进行分析,比较了几种算法的优点和不足,并给出了未来研究的方向。With the development of Flash memory, the Flash memory is widely used, which takes opportunity and challenge to the management of Flash-based database. As the Flash memory is different from the magnetic disk in the way of read and write, as well as the performance of read and writs, it is urgent to provide efficient buffer management for Flash memory. In order to improve the Flash memory access performance, buffer replacement algorithm should reduce the number of write/erase operations and retain a high buffer hit ratio. This paper analyzes the main algorithm of buffer replacement for Flash-based database, compares the advantages and disadvantages of the algorithm, and gives future research directions.

关 键 词：闪存 闪存数据库 缓冲区置换算法 

分 类 号：TP392[自动化与计算机技术—计算机应用技术]