TFT-LCD产业中GOA单元不良的研究  

GOA unit defect in TFT-LCD industry

作　　者：张小祥 颉芳霞[2] 刘正 郭总杰 袁剑峰 邵喜斌 

机构地区：[1]北京京东方显示技术有限公司,北京100176 [2]江南大学江苏省食品先进制造装备技术重点实验室,江苏无锡214122

出　　处：《液晶与显示》2015年第3期387-392,共6页Chinese Journal of Liquid Crystals and Displays

摘　　要：通过对TFT-LCD制造过程中GOA单元不良原因的研究,提出了改善GOA单元不良的方法。分析表明静电放电(ESD)的发生在于电容瞬间释放的电流过大,导致过细的金属线熔化;沟道桥接和开裂的发生在于显影效应,显影方向以及图案密度,导致局部区域沟道光刻胶厚度偏厚和偏薄。采用静电分散释放的连线设计,ESD的发生率从5.4%降低到0.04%以下。GOA单元两侧增加测试图样(Dummy Pattern)的设计防止沟道桥接的发生,减压干燥(VCD)抽气曲线的调整和软烘(Soft Bake)底部温度的优化措施防止沟道开裂的发生,沟道桥接和开裂的发生率从13.4%降低到1.22%以下。The reason for GOA unit defect is analyzed in the TFT-LCD manufacturing process,and the improving methods are given.The results show that the occurrence of the ESD is ascribed to excessive instantaneous release current of capacitance,leading to superfine wire melting,while the occurrence of the Channel Bridge and Open is related to the development effect,development direction and pat-tern density,which cause the abnormal channel photo resist.The design of electrostatic dispersion re-lease makes the incidence of ESD reduce from 5.4% to below 0.04%.The design of adding Dummy Pattern in both sides of GOA unit prevents Channel Bridge,meanwhile the adj ustment of Vacuum Dry extraction curve and the optimization of Soft Bake bottom temperature prevent Channel Open,which make the incidence of Channel Bridge and Open decrease from 13.4% to below 1.22%.

关 键 词：静电放电 沟道桥接 沟道开裂 显影效应 

分 类 号：TB31[一般工业技术—材料科学与工程]