直流电弧原子发射光谱法测定铌、钽中硅含量  

Determination of Silicon in Niobium and Tantalum by DC-Arc AES

作　　者：马晓敏[1] 王辉[1] 李波[1] 孙宝莲[1] 梁清华[1] 郑伟[1] 王宽[1] 

机构地区：[1]西北有色金属研究院,西安710016

出　　处：《理化检验（化学分册）》2015年第6期859-861,共3页Physical Testing and Chemical Analysis(Part B:Chemical Analysis)

摘　　要：通过直流电弧原子发射光谱仪，配备固体多道光学检测器一电感耦合器件，建立了直流电弧原子发射光谱法测定铌、钽中硅含量的方法。硅的分析线为288．160nm，铌中硅的缓冲剂为碳粉和氯化银，钽中硅的缓冲剂为碳粉。硅的质量分数在0．001％～0．100％范围内与其光谱强度呈线性关系，相关系数均在0．9996以上。加标回收率在97．7％～103％之间，测定值的相对标准偏差（n=7）均小于8％。DC-Arc AES equipped with multi-channel optical detector-charge coupled device was developed for the determination of silicon in niobium and tantalum. The analytical spectral line of 288. 160 nm was chosen for the determination of silicon. The buffering agent for silicon in niobium was the mixture of carbon dust and silver chloride,while for silicon in tantalum only carbon dust was used. Linear relationship between the spectral intensity and the mass fraction of silicon was obtained in the range of 0. 001%- 0. 100% with correlation coefficients above 0. 999 6. Recovery rates measured by standard addition method were in the range of 97. 7%- 103%,with RSD（ n = 7） less than 8%.

关 键 词：直流电弧原子发射光谱法 硅 铌 钽 

分 类 号：O657.31[理学—分析化学]