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作 者:范存留[1] 杨国涛[1] 范永义 易军[1] 韦叶娜 敬银钦 赵祥[1] 胡运高[1]
机构地区:[1]西南科技大学水稻研究所,四川绵阳621010
出 处:《云南大学学报(自然科学版)》2015年第4期623-632,共10页Journal of Yunnan University(Natural Sciences Edition)
基 金:国家科技支持计划(2011BAD35B02);四川省岗位专家项目(川农业函[2014]91号);杂交水稻国家重点实验室开放基金项目(2014KF01)
摘 要:以Ⅱ优838为材料,研究不同施钾量和施硅量对水稻茎秆基部节间结构特征和抗倒伏能力的影响.结果表明:施钾可以显著提高茎秆基部节间的抗折力,降低倒伏指数;改善水稻抗倒伏性的最佳施钾质量浓度为125 kg/hm2,可以使抗折力和纤维素分别提高97.76%、27.93%,倒伏指数和节间长度分别降低55.68%、13.18%.施硅可以使茎秆的抗折力提高、基部节间缩短、茎秆增粗、充实度提高.其中,120 kg/hm2处理使茎秆抗折力显著增加,倒伏指数显著降低.施用钾肥和硅肥能够使茎秆维管束面积增大,有效改善茎秆维管束系统;施用一定浓度的钾肥和硅肥均可以提高水稻基部节间的纤维素和木质素含量.施用钾肥主要是改善基部第3节的抗倒伏性,施用硅肥则是提高基部第2节的抗倒伏特性.The impact of different amounts of potassium and silicon fertilizer on the features of stalk basal internode structure and lodging resistance of ⅡYou 838 was studied. The results show that potassium can significantly improve the breaking resistance of basal internode and reducing the lodging index. The best potassium concentration to improve lodging resistance of rice is 12 kg / hm2,it can make the breaking resistance increased by97. 76% and cellulose increased by 27. 93%,lodging index and culm length decreased by 55. 68% and 13. 18%respectively. Silicon can improve the breaking resistance of the stem,shorten length of basal internode,thicken stem and improve plumpness. With the usage of 120 kg / hm2,the breaking resistance significantly increased and lodging index significantly reduced. Applications of potassium and silicon can increases culm vascular bundles area and effectively improve the vascular system of culm. Application of a certain concentration of potassium and silicon can improve cellulose and lignin content of the basal internode,but the application of potassium mainly improves the lodging resistance of N3 section,the application of silicon improves lodging resistance of N2 section.
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