基于乳酸-硝酸盐体系化学溶液法的GdBiO3缓冲层的快速制备  

Quick preparation of GdBiO_3 buffer layer by a chemical solution decomposition based on lactic-acid

作　　者：周涛[1] 蒲明华[1] 欧亚芝[1] 朱晓垒[1] 曹军红[1] 赵勇[1] 

机构地区：[1]西南交通大学磁浮技术与磁浮列车教育部重点实验室,超导与新能源研究开发中心,成都610031

出　　处：《低温与超导》2015年第7期46-50,共5页Cryogenics and Superconductivity

基　　金：国家自然科学基金(51072168);中央高校基本科研业务费专项资金(2682014ZT-9)资助

摘　　要：以YSZ为基片对以乳酸为溶剂的Gd Bi O3(GBO)缓冲层的化学溶液法(CSD)快速制备工艺进行了研究,着重研究了工艺温度对挥发和外延过程的影响。研究结果表明,涂覆薄膜中的乳酸可以在115℃-30min内几乎完全挥发,低于100℃时难以完全挥发出无水的硝酸盐混合膜。Ar气中GBO的最佳外延温度为800℃时间为1h。GBO缓冲层CSD法制备总工艺时间约为1.5小时。在此YSZ/GBO缓冲层上CSD法制备的YBa2C3Oz膜的转变温度可达90K。Quick preparation of GdBiO3 （ GBO ） buffer layer on single crystal YSZ by a chemical solution decomposition （CSD） based on lactic -acid was investigated especially about the temperature dependence of volatilization and growth processes. As restdts, almost a/1 the lactic - acid in coated layer would be volatilized within 30min at 115℃, while crystal water retained in the volatilized nitrate film below 100℃. The proper process conduction for growth in Ar gas was about 800℃ for 1 h. The total time for preparation of GBO by CSD based on lactic - acid was about 1.5 hours. The Tcin following coated superconductor layer of YBa2C3Oxon GBO was about 9OK.

关 键 词：快速制备 GdBiO3 缓冲层 

分 类 号：TQ131.22[化学工程—无机化工]