SiC基和Si基永磁同步电动机驱动器的比较  

Comparison of Permanent Magnet Synchronous Machine Drives Based on SiC and Si Devices

作　　者：谢昊天 秦海鸿[1] 聂新[1] 朱梓悦[1] 马策宇 

机构地区：[1]江苏省新能源发电与电能变换重点实验室南京航空航天大学,南京210016

出　　处：《上海电机学院学报》2015年第3期128-135,共8页Journal of Shanghai Dianji University

基　　金：教育部博士点基金项目资助(20123218120017);南京航空航天大学青年科技创新基金(理工类)项目资助(NS2015039);江苏高校优势学科建设工程资助项目

摘　　要：SiC MOSFET比Si IGBT具有更快的开关速度和更高的结温工作能力,有利于减小永磁同步电动机(PMSM)驱动器的开关损耗、缩短死区时间和提高开关频率。针对1kW PMSM,对功率器件分别采用Si IGBT和SiC MOSFET的PMSM驱动器进行了功率损耗计算分析,并对死区效应的影响进行了阐述和仿真分析。设计制作了基于两种功率器件的PMSM驱动器,对损耗、效率、散热器温升以及低速下死区效应的影响进行了实验对比,研究表明,SiC MOSFET可使PMSM驱动系统获得更高的效率、功率密度和更好的动态性能。Compared to Si IGBT,SiC MOSFET is characterized by faster switching speed and higher operating junction temperature.These are advantageous in decreasing switching losses,reducing dead time and improving switching frequency of permanent magnet synchronous machine（PMSM）drives.For specifications of a 1kW drive prototype,power losses of Si IGBTs and SiC MOSFETs are calculated for comparison.The effect of dead time is analyzed,and simulation results given.PMSM drive prototypes based on these two power devices are fabricated respectively.Experiments on power loss,efficiency,temperature rise and dead time effect under low speed are performed,and the results show that PMSM drive based on SiC MOSFET can achieve higher efficiency,higher power density and better dynamic performance.

关 键 词：碳化硅 永磁同步电动机 高开关速度 开关损耗 

分 类 号：TM341[电气工程—电机]