退火温度对ZnO/Mo/ZnO透明导电薄膜结构及光电性能的影响  

Effect of Annealing Temperature on Structural Electrical and Optical Properties of ZnO/Mo/ZnO Transparent Conductive Films

作　　者：孙洪涛[1] 王小平[1] 王丽军[1] 王金烨[1] 孙义清[1] 李剑[1] 文俊伟[1] 刘凌鸿 于颖[1] 

机构地区：[1]上海理工大学理学院,上海200093

出　　处：《材料科学与工程学报》2015年第3期352-356,351,共6页Journal of Materials Science and Engineering

基　　金：上海市教委创新基金重点资助项目(14ZZ137);上海理工大学国家级项目培育基金资助项目(14XPM04)

摘　　要：采用电子束蒸发法成功制备了透明导电的ZnO/Mo/ZnO(ZMZ)复合薄膜,研究了不同的退火温度对其电学和光学性质的影响规律。利用X射线衍射仪、扫描电子显微镜、X射线能谱仪、紫外可见分光光度计和四探针测试仪等检测手段对样品的性能进行了分析。实验结果表明:随着退火温度的升高,薄膜的结晶程度提高,晶粒尺寸增大;薄膜的电阻率先降低后升高;薄膜的光学透过率先升高后降低。当退火温度为250℃时,ZnO/Mo/ZnO薄膜具有最佳的综合光电性能,在400nm^900nm波长范围内最高透过率为81.4%,平均透过率高于80%,最低电阻率为1.71×10-4Ω·cm,表面电阻为15.5Ω/sq。研究表明所制备的ZMZ复合透明导电薄膜可应用于太阳能电池、液晶显示器等领域。ZnO/Mo/ZnO（ZMZ）multilayer films were deposited by electron-beam evaporation method.Effect of post growth annealing on the structural,electrical and optical properties of the multilayer films were investigated.The properties of ZMZ films were characterized by X-ray diffraction（XRD）,scanning electron microscope（SEM）,energy diffraction spectrum（EDS）,double-beam UV-spectrophotometer and four-point probe method.The experimental results indicate that all films have strong ZnO（002）preferential orientation. With the increase of annealing temperature,the crystallization,gain size and surface roughness increase.In addition,the optical transmittance first increase and then decrease,the resistivity first decreases and then increases.The figure of merit of the ZMZ film annealed at 250℃reached a minimum resistivity of 1.71×10-4Ω·cm and an average optical transmittance of 80%in the visible spectral range.The experimental results indicate that ZMZ films are attractive candidates as transparent electrode for solar cell and other display application.

关 键 词：氧化锌 透明导电薄膜 多层膜 光电性能 

分 类 号：O484.4[理学—固体物理] TB43[理学—物理]