P型氧化物半导体CuAlO_2粉末的制备工艺及掺杂  

Preparation and Doping of CuAlO_2 Powder as P-type Oxides Semiconductor

作　　者：麦海翔 梁毅枫 梁守智[1] 王夫[1] 胡典禄 谢致薇[1] 杨元政[1] 

机构地区：[1]广东工业大学材料与能源学院,广东广州510006

出　　处：《材料科学与工程学报》2015年第3期391-395,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(50971046)

摘　　要：本文采用柠檬酸络合无机盐的溶胶凝胶法制备CuAlO2粉末。通过差热分析、X射线衍射、扫描电子显微镜观测、紫外—可见光分光光度测试等分析方法,研究PVA添加剂、湿磨、球磨等工艺参数以及稀土元素Eu和普通金属Mg的掺杂对CuAlO2纳米粉末的制备及相结构和等性能的影响。结果表明,在不掺杂的情况下,添加PVA使粉末粒径均匀分布在10~20μm;球磨、湿磨处理预煅烧粉末可降低CuAlO2的形成温度,经1000℃煅烧后可获得纯相CuAlO2粉末,其粒度分别为5~15μm和5~10μm。Eu和Mg的最佳掺杂量分别为1%和5%;粉末未掺杂时光学带隙约为3.6eV,掺杂后其光学带隙有所减小,但仍对可见光透明。The CuAlO2 powders had been synthesized by inorganic sol-gel method.The effects of processing parameters,such as PVA additives,wet-milling,ball-milling and Eu/Mg-doping on the phase structure and properties of CuAlO2 were studied by DTA, X-ray diffraction, SEM and UV/VIS spectrophotometer.The results show that the average particle size of non-doped CuAlO2 powders with PVA is about 10~20μm,that of ball-milled powders is about 5~15μm and that of wet-milling powders is about 5~10μm.The pure CuAlO2 powders can be synthesied at 1000℃.The best doping amounts are 1% and 5% for Eu and Mg,respectively.The doped samples are still transparent to visible light although optical band gap reduced by doping.The optical band gap of the non-doped sample is about 3.6eV.

关 键 词：CuAlO2 PVA添加剂 研磨 掺杂 相结构 

分 类 号：TB34[一般工业技术—材料科学与工程]