射频磁控溅射低温制备ITO薄膜  

Preparation of ITO Thin Films by RF Magnetron Sputtering at Low Temperature

作　　者：王秀娟[1] 司嘉乐 杨德林[1] 谷锦华[1] 卢景霄[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,郑州450052

出　　处：《人工晶体学报》2015年第6期1516-1522,共7页Journal of Synthetic Crystals

基　　金：国家高技术研究发展计划(863计划)(2011AA050501)

摘　　要：利用射频磁控溅射法低温制备铟锡氧化物薄膜,主要研究了氧氩流量比、溅射功率、溅射压强、沉积温度和靶基距等工艺参数对ITO薄膜结构和光电性能的影响。在优化的沉积条件即氧氩流量比0.1/25、溅射功率210 W、溅射压强0.2 Pa、靶基距2.0 cm和衬底为100℃的低温下制备的ITO薄膜电阻率为7.3×10-4Ω·cm、可见光范围内平均透光率为89.4%。在氩气气氛中200℃低温退火60 min后,ITO薄膜的电阻率降为3.8×10-4Ω·cm,透光率不变。ITO thin films were prepared using radio frequency（ RF） magnetron sputtering. The effect of deposition parameters on the structure and photoelectric properties of ITO films were investigated. The results show that the optimum process parameters for ITO film deposition are O2/ Ar flow ratio of 0. 1 /25,sputtering power of 210 W,sputtering pressure of 0. 2 Pa,substrate temperature of 100 ℃ and substratetarget distance of 2. 0 cm,respectively. The average transmittance of the prepared ITO thin films in the visible region is 89. 4% and the resistivity is 7. 3 × 10^- 4Ω·cm. After deposition,the thin film was annealed in Ar for 60 min at 200 ℃,resistivity of thin films decreases to 3. 8 × 10^- 4Ω·cm.

关 键 词：ITO薄膜 射频磁控溅射 电阻率 

分 类 号：O484.1[理学—固体物理]