一种新型岛膜压力传感器的研究与设计  

Research and Design of a Novel Island Membrane Pressure Sensor

作　　者：余成昇 展明浩[1,2] 胡芳菲[1] 李凌宇 何凯旋 许高斌[1] 

机构地区：[1]合肥工业大学电子科学与应用物理学院安徽省MEMS工程技术研究中心,合肥230009 [2]中国兵器集团214研究所,安徽蚌埠233042

出　　处：《微纳电子技术》2015年第7期446-451,共6页Micronanoelectronic Technology

基　　金：国家高技术研究发展计划(863计划)资助项目(2013AA041101)

摘　　要：设计了一种量程为180 kPa的新型岛膜结构MEMS压阻式压力传感器,通过ANSYS仿真软件,得出了在岛宽为500μm、岛厚为40μm、梁宽为200μm、敏感薄膜厚为15μm的情况下,该结构具有较好的线性度及灵敏度。提出了一种基于两层SOI硅-硅直接键合的工艺加工方法,能够精确控制敏感薄膜及岛的厚度,并且全硅结构器件能够避免键合残余应力,大大提高器件性能。采用了双惠斯登电桥电路减小传感器输出的温漂效应,并设计了该电路的压敏电阻连接图。最后对该压力传感器进行了测试,结果表明,其非线性为0.64%,精度为0.74%,满足现代工业应用要求。A new type of island membrane structure MEMS piezoresistive pressure sensor with a range of 180 kPa was designed.The ANSYS software simulation results show that under the island width of 500μm,island thickness of 40μm,beam width of 200μm and sensitive film thickness of 15μm,the structure has a better linearity and sensitivity.A method of processing technology based on two-layer SOI silicon-silicon direct bonding was presented.The method can precisely control the thicknesses of the sensitive film and island.Besides,the whole silicon structure device can avoid the bonding residual stress and greatly improve the device performance.The double Wheatstone bridge circuit was applied to reduce the temperature drift effect of the sensor output,and the pressure sensitive resistor connected graph of the circuit was designed.Finally,the pressure sensor was tested.The result shows that the nonlinearity is 0.64%and the accuracy is 0.74%,satisfying the requirements of the modern industrial application.

关 键 词：微电子机械系统(MEMS) 压力传感器 岛膜结构 ANSYS仿真 硅-硅直接键合 绝缘衬底上硅(SOI) 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置] TH703[自动化与计算机技术—控制科学与工程]