衬底及其温度对铝诱导非晶硅薄膜晶化的影响  

EFFECT OF SUBSTRATE AND ITS TEMPERATURE ON ALUMINUM INDUCED AMORPHOUS SILICON FILMS RAPID CRYSTALLIZATION

作　　者：段良飞[1,2] 张力元[1,2] 杨培志[1,2] 化麒麟[1,2] 邓双[1,2] 彭柳军[1,2] 

机构地区：[1]可再生能源材料先进技术与制备教育部重点实验室,昆明650092 [2]云南师范大学太阳能研究所,昆明650092

出　　处：《太阳能学报》2015年第7期1556-1560,共5页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金联合基金(U1037604)

摘　　要：利用磁控溅射镀膜技术,采用不同温度在玻璃、单晶硅衬底上溅射α-Si/Al膜,并在N_2气氛中进行快速光热退火;利用X射线衍射(XRD)仪和拉曼散射光谱仪对薄膜样品进行表征分析。结果表明:单晶硅衬底有利于α-Si/Al膜的晶化;衬底温度从室温到200℃之间逐渐升高,薄膜的晶粒尺寸及晶化率增加;随着温度进一步升高,薄膜的晶粒尺寸及晶化率又降低。单晶硅衬底上200℃时α-Si/Al膜可直接晶化。通过计算,得出衬底参数对薄膜的晶相比、晶粒尺寸、带隙及界面体积分数的调制关系。Amorphous silicon （or-Si）/aluminum （A1） films were prepared by magnetron sputtering based on glass and monocrystalline silicon substrate at different temperatures, and then annealed by RTA in N2 atmosphere. X-ray diffraction （XRD） instrument and Raman scattering were used to analyse the structure and properties of μc-Si films. The results showed that monocrystalline silicon substrate and heating can improve the crystallization of α-Si/A1 films ; The crystalline volume fraction of μc-Si films increased with the increasing of substrate temperature from ambient to 200 ℃. And then crystalline volume fraction decreased with increasing of substrate temperature from 200 ℃ to 250 ℃. α-Si/A1 films can be crystallized in the substrate of monocrystalline silicon with substrate temperatures 200 ℃. The effects of substrate parameters on crystallization rate, grain size, band gap and the volume fraction of interface were obtained by calculating.

关 键 词：衬底 非晶硅 铝诱导 退火 晶化 

分 类 号：TK513.5[动力工程及工程热物理—热能工程]