Research on structural characteristics of large-scale CdS thin films deposited by CBD under low ammonia condition  

作　　者：薛玉明 高林 尹富红 乔在祥 刘浩 冯少君 孙海涛 杭伟 

机构地区：[1]Tianjin Key Laboratory of Film Electronic and Communication Devices,Department of Electronics Information Engineering,Tianjin University of Technology [2]National Key Laboratory of Power Sources,Tianjin Institute of Power Sources

出　　处：《Optoelectronics Letters》2015年第4期273-276,共4页光电子快报（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(No.2012AA050701)

摘　　要：Cadmium sulfide(Cd S) buffer layers with the scale of 10 cm×10 cm are deposited by chemical bath deposition(CBD) with different temperatures and thiourea concentrations under low ammonia condition.There are obvious hexagonal phases and cubic phases in Cd S thin films under the conditions of low temperature and high thiourea concentration.The main reason is that the heterogeneous reaction is dominant for homogeneous reaction.At low temperature,Cd S thin films with good uniformity and high transmittance are deposited by adjusting the thiourea concentration,and there is almost no precipitation in reaction solution.In addition,the low temperature is desired in assembly line.The transmittance and the band gap of Cd S thin films are above 80% and about 2.4 e V,respectively.These films are suitable for the buffer layers of large-scale Cu(In,Ga)Se2(CIGS) solar cells.

关 键 词：ammonia transmittance hexagonal CIGS thiourea assembly cubic uniformity adjusting sulfide 

分 类 号：TB306[一般工业技术—材料科学与工程] TQ132.44[化学工程—无机化工]