Effect of Sintering on Grain Boundary Microstructure and Electrical Properties of CaCu_3Ti_4O_(12) Ceramics  

作　　者：YANG Zhi XIONG Rui 

机构地区：[1]City College, Wuhan University of Science and Technology [2]School of Physics and Technology/Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education,Wuhan University

出　　处：《Wuhan University Journal of Natural Sciences》2015年第3期255-261,共7页武汉大学学报（自然科学英文版）

基　　金：Supported by the National Natural Science Foundation of China(51172166);the Ph.D.Programs Foundation of City College,Wuhan University of Science and Technology(2014CYBSKY003)

摘　　要：CaCu3Ti4O12 ceramic with a giant dielectric constant was synthesized by sol-gel method and sintered in three different sintering conditions： 1 035 ℃ for 48 h, 1 080 ℃ for 3 h and 48 h. The phase of the ceramics, the element distribution, the valance state of Ti ions at grain boundaries, and the electrical properties were characterized via X-ray diffraction（XRD）, energy dispersive X-ray analysis（EDAX）, X-ray photoelectron spectroscopy（XPS）, electrical conduction and dielectric measurement. The results demonstrate that the grain-boundary microstructure and the electrical properties are influenced by sintering conditions： 1 By raising sintering temperature, the Cu-rich and Ti-poor grain boundary was formed and grain resistivity was decreased. 2 By prolonging sintering time, the content of Ti3＋ near the grain boundary increased, leading to the decrease of the grain-boundary resistivity and the increase of the activation energy at grain boundary. The ceramic, sintering at 1 080 ℃ for 48 h, exhibited a small grain resistivity（60.5 ＊cm）, a large grain-boundary activation energy（0.42 e V）, and a significantly enhanced dielectric constant（close to 1×105 at a low frequency of 1×103 Hz）. The results of electrical properties accord with the internal boundary layer capacitor model for explaining the giant dielectric constant observed in Ca Cu3Ti4O12 ceramics.CaCu3Ti4O12 ceramic with a giant dielectric constant was synthesized by sol-gel method and sintered in three different sintering conditions： 1 035 ℃ for 48 h, 1 080 ℃ for 3 h and 48 h. The phase of the ceramics, the element distribution, the valance state of Ti ions at grain boundaries, and the electrical properties were characterized via X-ray diffraction（XRD）, energy dispersive X-ray analysis（EDAX）, X-ray photoelectron spectroscopy（XPS）, electrical conduction and dielectric measurement. The results demonstrate that the grain-boundary microstructure and the electrical properties are influenced by sintering conditions： 1 By raising sintering temperature, the Cu-rich and Ti-poor grain boundary was formed and grain resistivity was decreased. 2 By prolonging sintering time, the content of Ti3＋ near the grain boundary increased, leading to the decrease of the grain-boundary resistivity and the increase of the activation energy at grain boundary. The ceramic, sintering at 1 080 ℃ for 48 h, exhibited a small grain resistivity（60.5 ＊cm）, a large grain-boundary activation energy（0.42 e V）, and a significantly enhanced dielectric constant（close to 1×105 at a low frequency of 1×103 Hz）. The results of electrical properties accord with the internal boundary layer capacitor model for explaining the giant dielectric constant observed in Ca Cu3Ti4O12 ceramics.

关 键 词：CaCu3Ti4O12 sintering microstructure electrical conduction dielectric 

分 类 号：TQ174.758[化学工程—陶瓷工业] TB383[化学工程—硅酸盐工业]