一种消除体效应的纳瓦量级全CMOS基准电压源  

A CMOS-only Nanopower Voltage Reference Without the Body Effect

作　　者：段吉海[1] 邓东宇 徐卫林[1] 韦保林[1] 

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004

出　　处：《微电子学与计算机》2015年第7期152-156,共5页Microelectronics & Computer

基　　金：国家自然科学基金(61161003;61264001;61166004);广西自然科学基金项目(2013GXNSFAA019333)

摘　　要：提出了一种全部采用MOSFET构成的极低功耗基准电压源.电路由一个结构新颖的纳安量级基准电流源和温度补偿电路构成;利用CMOS源极耦合差分对代替了传统带隙电压源中所采用的电阻和Bipolar晶体管,减小了功耗和芯片面积,消除了MOS管体效应对电路的影响.采用SMIC 0.18μm CMOS工艺进行电路设计和仿真,结果表明,电路的温度系数为90,芯片面积0.006,功耗仅为54nW.该电路适用于低功耗移动电子设备.An extreme low power voltage reference containing only MOSFETs is presented in this paper. The voltage reference consists of a nano-ampere current reference and a temperature compensation circuit. In the proposed circuit, the CMOS source coupled differential pairs is used to replace the resistors and bipolar transistors uesd in the traditional voltage reference circuits. This kind of construct can not only reduce the power consumption and chip area but also eliminate the influence of MOSFETs body effect on circuit. The design and simulation are based on SMIC 0. 18 /lm CMOS process. The results of simulation demonstrate that a temperature coefficient of 90 is achieved, the occupied chip area is 0. 006, the power dissipation is 54 nW. This voltage reference is suitable for the mobile electronic devices with low power consumption.

关 键 词：电压基准 极低功耗 无电阻 无Bipolar晶体管 

分 类 号：TN4[电子电信—微电子学与固体电子学]