常压烧结法制备ZnO陶瓷靶材  

Fabrication of ZnO ceramic target by conventional sintering

作　　者：孙文燕[1] 王日初[1] 王小锋[1] 彭超群[1] 

机构地区：[1]中南大学材料科学与工程学院,长沙410083

出　　处：《中国有色金属学报》2015年第6期1625-1633,共9页The Chinese Journal of Nonferrous Metals

基　　金：国家青年自然科学基金资助项目(51202296);教育部高校博士点专项科研基金资助项目(2012016212006)

摘　　要：采用凝胶注模成型技术制备ZnO陶瓷坯体,并在较低温度下常压烧结后获得相对密度达98.6%、晶粒尺寸为1.35μm的陶瓷靶材,研究工艺参数对ZnO陶瓷靶材的相对密度、晶粒生长和电阻率的影响。结果表明:ZnO陶瓷靶材的相对密度随烧结温度升高而增大,在1050℃时达到最大值。适当增大升温速率或延长保温时间都有利于提高其相对密度。晶粒尺寸随升温速率的升高而减小,随保温时间的延长而增大。提高烧结温度和增加保温时间都可降低ZnO陶瓷靶材的电阻率。ZnO陶瓷靶材经1400℃烧结3 h后,获得的电阻率最小(为1.75×10-2?·cm)。ZnO ceramic target with the relative density of 98.6% and grain size of 1.35 μm was fabricated by gelcasting and conventional sintering at low temperature. The effects of processing on the relative density, grain growth and electrical resistivity of ZnO ceramic target were studied. The results show that the relative density of ZnO ceramic targets increases with increasing the sintering temperature, and reaches the maximum value at 1050 ℃. The relative density of ZnO ceramic targets increases with increasing the heating rate or duration time. The grain sizes decrease with increasing the heating rate, while increase with increasing the duration time. With increasing the sintering temperature and duration time, the electrical resistivity of ZnO ceramic target reduces. The low electrical resistivity of 1.75×10-2 Ω·cm is achieved at the temperature of 1400 ℃.

关 键 词：ZnO陶瓷靶材 凝胶注模 常压烧结 相对密度 晶粒尺寸 电阻率 

分 类 号：TN43[电子电信—微电子学与固体电子学]