基于NPB和Bphen的有机紫外探测器件的性能研究  

Study on the Performance of Organic Ultraviolet Photodetector Based on NPB and Bphen

作　　者：苏斌[1,2,3] 张欣馨[2] 刘春波[2] 车广波[1,2] 刘书宇[2] 

机构地区：[1]吉林师范大学环境科学与工程学院,吉林四平136000 [2]吉林师范大学环境友好材料制备与应用教育部重点实验室,吉林四平136000 [3]江苏大学化学化工学院,江苏镇江212000

出　　处：《半导体光电》2015年第3期369-371,438,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61205040);教育部新世纪优秀人才支撑计划项目(NCET-10-0176);吉林省创新团队项目(20130521019JH);江苏省普通高校研究生科研创新项目(CXLX13_663);四平市科技局项目(2013050)

摘　　要：有机紫外光探测器(Organic Ultraviolet Photodetector,OUV-PD)因质量轻、柔性和成本低等优点已引起广泛关注。以m-MTDATA、NPB和Bphen分别为空穴注入层、给体和受体制备了OUV-PD。器件结构为:ITO/m-MTDATA/NPB/Bphen/LiF/Al,通过优化给受体层的厚度,实现了器件的最优性能。当NPB厚度为60nm、Bphen厚度为90nm时器件性能最佳,在光照强度为1.05mW/cm2、波长为365nm的紫外光照射下,最大响应度为131mA/W。同时,结合材料特点和器件结构讨论了工作机理。Organic ultraviolet photodetector（OUV-PD）has attracted board attention due to light quality,flexibility,low cost,etc.In this paper,OUV-PDs were fabricated by using mMTDATA,NPB and Bphen as the hole inject layer,donor and acceptor,respectively.The OUV-PDs with the structure of ITO/m-MTDATA/NPB/Bphen/LiF/Al were fabricated,and by optimizing the thicknesses of m-MTDATA layer,optimal performance of the devices was ahcieved.It is indicated that when the thickness of NPB and Bphen is 60 and 90nm,a maximum response of 131mA/W can be obtained under an illumination of 365 nm UV light with the power of 1.05mW/cm2.The working mechanism of the OUV-PD is also discussed in terms of the performance and device structures.

关 键 词：有机紫外探测器件 NPB Bphen 响应度 

分 类 号：TN31[电子电信—物理电子学]