光照对HF/Fe(NO_3)_3溶液中制备硅纳米线的作用研究  

Investigation of photo-induced phenomenon in the silicon nanowires made by chemical etching in HF/Fe(NO_3)_3 solution

作　　者：刘琳[1,2] 王永田[1] 

机构地区：[1]华北电力大学能源动力与机械工程学院,北京102206 [2]北京师范大学能源转换与存储材料北京市重点实验室,北京100875

出　　处：《物理学报》2015年第14期352-358,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:51377096);中国博士后科学基金(批准号:2014M560934);中央高校基本科研业务费专项资金(批准号:2015QN16;2014ZP02;2015MS44)资助的课题~~

摘　　要：以不同掺杂浓度的单晶n型硅为衬底、金属银为催化剂、硝酸铁作为氧化剂制备硅纳米线,系统研究了光照对不同硝酸铁浓度条件下用化学腐蚀法制备硅纳米线的作用.研究发现,不同掺杂浓度的硅衬底,光照对硅纳米线长度的影响明显不同.通过对比硅纳米线的长度,发现光照对硅纳米线的形成兼具促进和溶解作用,并分别从能带结构、电化学表征和光致发光等方面对这两种作用的形成机理进行了深入讨论.The photo-induced phenomenon in the silicon nanowires made Oy cnemlcal e^cnmg m ,lr/1.~,~/~ investigated systematically by using monocrystal n-type silicons with different doping concentrations as substrates, silver as catalyst, and iron nitrates with different concentrations as oxidants. It is found that the length of silicon nanowires is determined not only by the doping concentration of substrate and the mass of oxidant, but also by the photo-induced effect. The prepared silicon nanowires may have potential applications in green energy storage device and the substrate material for sensor. In this paper, we discuss the formation mechanism from the band structure, electrochemical characterization and photoluminescence in depth. The results in this paper provide physical theoretical evidence for the development of the method, and have important guiding significance to promote the technology.

关 键 词：硅纳米线 化学腐蚀法 光照 

分 类 号：TB383.1[一般工业技术—材料科学与工程] O613.72[理学—无机化学]