Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth  

作　　者：Rui Yang Wan-qi Jie Hang Liu 

机构地区：[1]State Key Laboratory of Solidification Processing, Northwestern Polytechnical University

出　　处：《International Journal of Minerals,Metallurgy and Materials》2015年第7期755-761,共7页矿物冶金与材料学报（英文版）

基　　金：financially supported by the National Basic Research Program of China (No. 2011CB610406);the National Natural Science Foundation of China (No. 51372205);supported by the 111 Project of China (No. B08040);the Specialized Research Fund for the Doctoral Program of Higher Education of China (No. 20116102120014);the Northwestern Polytechnical University Foundation for Fundamental Research;the Research Fund of the State Key Laboratory of Solidification Processing (NWPU)

摘　　要：Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-type conductivity, with a carrier concentration of approximately 10^14cm^-3, a mobility of approximately 300 cm^2·V·s^-1, and a resistivity of approximately 10^2 Ω·cm. A simple and effective method was proposed for chemical surface texturization of ZnTe using an HF：H2O2：H2O etchant. Textures with the sizes of approximately 1μm were produced on {100}, {110}, and { 111}zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-type conductivity, with a carrier concentration of approximately 10^14cm^-3, a mobility of approximately 300 cm^2·V·s^-1, and a resistivity of approximately 10^2 Ω·cm. A simple and effective method was proposed for chemical surface texturization of ZnTe using an HF：H2O2：H2O etchant. Textures with the sizes of approximately 1μm were produced on {100}, {110}, and { 111}zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.

关 键 词：semiconductor materials crystal growth electrical properties surfaces ETCHING microstructure 

分 类 号：TN304[电子电信—物理电子学]