应变补偿InGaN/AlGaN超晶格改善近紫外LED性能  

Near-UV LED photoelectric properties of strain-compensated In Ga N/Al Ga N superlattice layers

作　　者：尹以安[1,2] 章勇[1,2] 范广涵 李述体[1,2] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631 [2]广东省光电功能材料与器件工程技术研究中心,广东广州510631

出　　处：《电子元件与材料》2015年第8期42-46,共5页Electronic Components And Materials

基　　金：国家自然科学基金项目资助(No.61176043);广州市科技计划项目资助(No.201510010229;No.2014J4100056);广东省科技计划资助项目(No.2013B040402009)

摘　　要：通过应变平衡理论设计出应变补偿的In0.1Ga0.9N/Al0.2Ga0.8N超晶格结构。为了验证该结构具有低的应变,实验生长了相应的样品,并通过双晶衍射(XRD)和拉曼(Raman)光谱实验证实其具有低应力。最后把该结构用于近紫外LED的两处构建,一是替代量子阱中的Ga N垒层,二是作p型层的接触层。实验发现,该结构的应用不但可以减弱量子阱的Stark效应和抑制电子泄露,而且降低p型接触层的欧姆接触电阻。且发现不用电子阻挡层情况下,其输出功率、PL光谱和I-V特性等都得到极大改善。The strain-compensated In0.1Ga0.9N/Al0.2Ga0.8N superlattice structure was designed by strain equilibrium theory. To verify the structure with low stress, p-InGaN/p-AlGaN superlattice lattice layers （SLs） with a strain-compensated structure was fabricated by epitaxial growth technology, and low stress in the structure was verified by double-crystal x-ray diffraction （XRD） and Raman spectroscopy （Raman）. The experimental results show that the near-UV LEDs with strain-compensated In0.1Ga0.9N/Al0.2Ga0.8N SLs have higher emission power over their conventional counterparts with GaN barriers due to the mitigation of the quantum-confined Stark effect and the suppression of electron leakage. Furthermore, the performances of the near-UV LEDs with proposed InGaN/AlGaN barriers can be further improved without electron blocking layers.

关 键 词：应变平衡 InGaN/AlGaN超晶格 应变补偿 极化效应 p型欧姆接触电阻 近紫外LED 

分 类 号：TN432[电子电信—微电子学与固体电子学]