硅压力传感器基座受力变形时的输出性能  

Output Performance of Silicon Pressure Sensor Influenced by Deformation of Sensor Substrate

作　　者：胡国清[1] 龚小山 周永宏 邹崇 Jahangir Alam 

机构地区：[1]华南理工大学机械与汽车工程学院,广东广州510640 [2]福建上润精密仪器有限公司,福建福州350015

出　　处：《华南理工大学学报（自然科学版）》2015年第3期1-8,共8页Journal of South China University of Technology(Natural Science Edition)

基　　金：国家"863"高技术计划项目(2014AA042000)~~

摘　　要：为分析硅压力传感器基座受力变形对传感器输出性能的影响,首先利用弹性力学理论和板壳理论分析推导了压力传感器方形膜片应力分布,为力敏电阻在应变膜上的布置提供依据;再利用ANSYS进行分析模拟,探究了传感器基座结构变形对应变膜应力差的影响;然后针对减小基座受力变形对芯片受力的影响,对基座结构进行适当优化,并对比仿真分析的结果;最后通过实验测得优化前后的传感器输出数据.结果表明,传感器基座结构优化后,传感器硅芯片中心最大变形量从2.172μm降低到1.819μm,输出误差从0.95%下降到0.60%.In order to analyze the performance of silicon pressure sensor influenced by the deformation of sensor substrate,firstly,the stress distribution of pressure sensor quadrate in the thin diaphragm was deduced on the basis of elastic mechanics theory and plate-shell theory,which provided a basis for the arrangement of resisters in strain membrane. Secondly,the effect of substrate deformation on the stress difference of strain membrane was analyzed via a simulation in ANSYS environment. Then,in order to diminish the influence of sensor substrate deformation,an appropriate optimization of substrate structure was conducted,and a comparison of simulation results was made.Finally,experiments were carried out to test the outputs of the sensor before and after optimization. It is indicated that,after the optimization,the largest deformation of sensor chip center reduces from 2. 172 μm to 1. 819 μm,and the output error decreases from 0. 95% to 0. 60%.

关 键 词：压力传感器 硅传感器 输出性能 有限元分析 结构优化 

分 类 号：TH86[机械工程—仪器科学与技术]